1 / 1 4 n ??? n - c hannel mosfet j cs 5 n 6 5 f b order codes ? marking ? package halogen free ? packaging device weight jcs 5 n6 5 f b - o - f - n - b jcs 5 n6 5 f b to - 2 20 m f no tube 2.20 g(typ) ? main charac teristics i d 4 .0 a v dss 6 5 0 v rdson - max @vgs=10v 2.4 qg - typ 13.3 nc ? ? ??? ? ? ups ? ? ? ? ? c rss ( ? 9 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 9 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? order mess age applications ? high frequency switching mode power supply ? electronic ballast ? ups r
jcs 5 n 6 5 f b 20 1 5 10 b 2 / 9 ?? absolute ratings (tc= 25 ) ? parameter symbol ? value unit jcs 5 n6 5 f b ???? drain - source voltage v dss 650 v ? drain current - continuous i d t=25 t=100 4.0 * a 2.5 * a ? ? 1 drain current - pulse note 1 i dm 16 * a ??? gate - source voltage v gss 30 v ? ? 2 single pulsed avalanche energy ( note 2 e as 240 mj ? ? 1 avalanche current note 1 i ar 4.0 a ?? ? 1 repetitive avalanche energy note 1 e ar 10.0 mj ??? ? 3 peak diode recovery d v/dt note 3 dv/dt 5.5 v/ns ? power dissipation p d t c =25 - derate above 25 33 w 0.26 w/ ??? operating and storage temperature range t j t stg - 55 +150 ?? maximum lead temperature for soldering purposes t l 300 ? ? f lame - ret ardant grade ul94 - v 0 * ?? *drain current limited by maximum junction temperature r
jcs 5 n 6 5 f b 20 1 5 10 b 3 / 9 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 6 5 0 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 65 - v/ ???? zero gate voltage drain current i dss v ds = 6 5 0v,v gs =0v, t c =25 - - 1 0 a v ds = 50 0v, t c =125 - - 1 0 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4.0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 2 a - 1.7 2. 4 ? forward transconductance g fs v ds = 40v , i d = 2 a note 4 - 4.7 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 490 642 pf output capacitance c oss - 95 124 pf reverse transfer capacitance c rss - 9 12 pf r
jcs 5 n 6 5 f b 20 1 5 10 b 4 / 9 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 3 25 v,i d = 4 a,r g =25? note 4 5 - 16 42 ns ? turn - on rise time t r - 49 111 ns ?? turn - off delay time t d (off) - 46 1 02 ns ?? turn - off fall time t f - 37 84 ns ? total gate charge q g v ds = 520 v , i d = 4 a v gs =10v note 4 5 - 13.3 19 nc ?? gate - source charge q gs - 3.6 - nc ?? g ate - drain charge q gd - 4.9 - nc ????? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 4 a maximum pulsed drain - source diode forward current i sm - - 1 6 a ? drain - source diode forward voltage v sd v gs =0v, i s = 4 .0 a - - 1. 4 v ?? reverse recovery time t rr v gs =0v, i s = 4 .0 a di f /dt=100a/ s (note 4) - 33 0 - ns ? reverse recovery charge q rr - 2.6 7 - c ? parameter symbol max unit jcs 5 n6 5 f b ??? thermal resistance, junction to case r th(j - c) 3.79 /w ? thermal resistance, junction to ambient r th(j - a) 62.5 /w ? ? 1 ? 2 l = 25 mh, i as = 4 .0 a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 4 .0 a,di/dt 2 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 25 mh, i as = 4 .0 a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 4 .0 a,di/dt 2 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 e ssentially independent of operating temperature r
jcs 5 n 6 5 f b 20 1 5 10 b 5 / 9 electrical characteristics (curves) on - region characteristics transfer characteristics on - res istance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics r 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v 150 i d [a] v gs [v] 25 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 notes 1. 250s pulse test 2. v gs =0v 25 150 v sd [v] i dr [a] 10 1 10 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i d [a] v ds [v] 0 1 2 3 4 5 6 1.2 1.4 1.6 1.8 2.0 2.2 2.4 note t j =25 v gs =10v r ds (on ) [ ] i d [a] v gs =20v 10 -1 10 0 10 1 0.0 2.0x10 2 4.0x10 2 6.0x10 2 8.0x10 2 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v ds drain-source voltage [v]
jcs 5 n 6 5 f b 20 1 5 10 b 6 / 9 electrical characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximum safe operating area for jcs 5 n6 5 f b maximum drain current vs. case temperature r -75 -50 -25 0 25 50 75 100 125 150 0.90 0.95 1.00 1.05 1.10 1.15 notes 1. v g s =0v 2. i d =250a t j [ ] bv dss (normalized) -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =2.0a r ds (on ) (normalized) t j [ ]
jcs 5 n 6 5 f b 20 1 5 10 b 7 / 9 electrical characteristics (curves) transient thermal response curve for jcs 5 n6 5 f b r
jcs 5 n 6 5 f b 20 1 5 10 b 8 / 9 ? package mechanical data to - 2 20 mf u nit mm r
jcs 5 n 6 5 f b 20 1 5 10 b 9 / 9 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ???? ? ?????? 4. ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our co mpany. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designin g. 4. jilin sino - microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 64678411 86 - 432 - 64665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 64675588 64675688 64678411 : 86 - 432 - 64671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 64678411 fax 86 - 432 - 64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 64675588 64675688 64678411 fax: 86 - 432 - 64671533 r
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